In-situ doped poly-sige LPCVD process using BCL3 for post-cmos integration of MEMS devices

Proceedings - Electrochemical Society

Volumn 7, Issue , 2004, Pages 1021-1032

  Low, Carrie W ^a   Wasilik, Matthew L ^a   Takeuchi, Hideki ^a   King, Tsu Jae ^a   Howe, Roger T ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CMOS INTEGRATED CIRCUITS; COMPRESSIVE STRESS; DEPOSITION; DOPING (ADDITIVES); MICROELECTROMECHANICAL DEVICES; PARTIAL PRESSURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON COMPOUNDS; THERMAL EFFECTS; THIN FILMS;

DEPOSITION RATES; DOPANTS; STRAIN GRADIENTS; THERMAL BUDGET;

POLYCRYSTALLINE MATERIALS;

EID: 17044424623     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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9. A. E. Franke, Ph. D. Thesis, Polycrystalline Silicon-Germanium Films for Integrated Microsystems, University of California at Berkeley, p. 118-119 (2000)