Effect of deposition parameters on the stress gradient of CVD and PECVD poly-SiGe for MEMS applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5342, Issue , 2004, Pages 8-18

  Van Der Donck, T ^a,b   Proost, J ^b   Rusu, C ^a,c   Baert, K ^a   Van Hoof, C ^a   Celis, J P ^b   Witvrouw, A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Imego AB The Institute of Micro and Nanotechnology   (Sweden)

Author keywords

CVD; PECVD; Poly SiGe; Stress gradient; Stress profile

Indexed keywords

CRYSTALLIZATION; GRAIN SIZE AND SHAPE; MICROMACHINING; MICROSTRUCTURE; PHASE TRANSITIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; PROFILOMETRY; SCANNING ELECTRON MICROSCOPY; STRESSES; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); POLY-SIGE; STRESS GRADIENT; STRESS PROFILES;

MICROELECTROMECHANICAL DEVICES;

EID: 2142806966     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.524406     Document Type: Conference Paper

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