Codoping in ZnO using GaN by pulsed laser deposition

Journal of Crystal Growth

Volumn 294, Issue 2, 2006, Pages 273-277

  Gopalakrishnan, N ^a   Shin, B C ^b   Lim, H S ^b   Balasubramanian, T ^a   Yu, Y S ^b  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b Dong Eui University   (South Korea)

Author keywords

A1. Characterisation; A1. Codoping; A1. Defects; A3. Pulsed laser deposition; B1. Gallium nitride; B1. Zinc oxide

Indexed keywords

CONCENTRATION (PROCESS); CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM NITRIDE; NITROGEN; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

CODOPING; GLOW DISCHARGE MASS SPECTROSCOPY (GDMS);

GALLIUM;

EID: 33947178912     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.06.045     Document Type: Article

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