The effect of ZnO homo-buffer layer on ZnO thin films grown on c-Al 2O3(0 0 0 1) by plasma assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 267, Issue 1-2, 2004, Pages 85-91

  Jung, Yeon Sik ^a   No, Young Soo ^a   Kim, Jin Sang ^a   Choi, Won Kook ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

A1. Crystal structure; A1. Photoluminescence; A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; DEPOSITION; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMAS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; STREAK CAMERAS; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

FIELD EMISSION SCANNING ELECTRON MICROSCOPY (FE-SEM); HOMO-BUFFER LAYER; NEAR BAND-EDGE EMISSION (NBE); SEMICONDUCTING II-VI MATERIALS; STREAKY PATTERN;

THIN FILMS;

EID: 2942607949     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.03.010     Document Type: Article

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