Comparison of ZnO:GaN films on Si(1 1 1) and Si(1 0 0) substrates by pulsed laser deposition

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 756-759

  Gopalakrishnan, N ^a   Shin, B C ^a   Lim, H S ^a   Kim, G Y ^a   Yu, Y S ^a  

^a Dong Eui University   (South Korea)

Author keywords

Dopant concentrations; Lattice mismatch; ZnO films

Indexed keywords

ELECTRIC CONDUCTIVITY; HALL EFFECT; MASS SPECTROMETERS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

CODOPING PROCESS; DOPANT CONCENTRATIONS; FULL-WIDTH AT HALF-MAXIMUM (FWHM); GAN-DOPED SAMPLES; GLOW DISCHARGE MASS SPECTRA (GDMS); HALL MEASUREMENTS; LATTICE MISMATCH; OPTICAL QUALITY; ZNO FILMS;

ZINC OXIDE;

EID: 33645157463     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.189     Document Type: Conference Paper

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