4H-SiC visible blind UV avalanche photodiode

Electronics Letters

Volumn 35, Issue 11, 1999, Pages 929-930

  Yan, F ^a   Luo, Y ^a   Zhao, J H ^a   Olsen, G H ^b  

^a RUTGERS UNIVERSITY   (United States)

^b GOODRICH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN OF SOLIDS; SILICON CARBIDE; ULTRAVIOLET RADIATION;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0032657521     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990641     Document Type: Article

References (5)

1. PELAZ, L., ORANTES, J., VICENTE, J., BAILON, L., and BARBOLLA, J.: 'Avalanche breakdown of high voltage p-n junctions of SiC', Microelectron. J., 1996, 27, pp. 43-51
2. KONSTANTINOV, A., NORDELL, N., WAHAB, Q., and LINDEFELT, U.: 'Temperature depedence of avalanche breakdown for epitaxial diodes in 4H-SiC', Appl. Phys. Lett., 1998, 73, (13), pp. 1850-1852
3. BROWN, D., DOWNEY, E., GHEZZO, M., KRETCHMER, J., SAIA, R., LIU, Y., EDMOND, J., GATI, G., PIMBLEY, J., and SCHNEIDER, W.: 'Silicon carbide UV photodiodes', IEEE Trans., 1993, ED-40, (2), pp. 325-333
4. LI, B., CAO, L., and ZHAO, J.: 'Evaluation of damage induced by inductively coupled plasma etchingof 6H-SiC using Au Schottky barrier diodes', Appl. Phys. Lett., 1998, 73, (5), pp. 653-655
5. 2/SiC structures', IEEE Trans., 1999, ED-46, (3), pp. 511-519