Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 14, Issue 9, 2002, Pages 1342-1344

  Ng, B K ^a   Yan, F ^b   David, J P R ^a   Tozer, R C ^a   Rees, G J ^a   Qin, C ^b   Zhao, J H ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

4H SiC; Avalanche multiplication; Excess noise; Impact ionization; Photodiodes; UV APD; Visible blind

Indexed keywords

AVALANCHE DIODES; SILICON CARBIDE; SPURIOUS SIGNAL NOISE; ULTRAVIOLET RADIATION;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0036742265     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.801112     Document Type: Article

References (9)

1. A. O. Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt, "Ionization rates and critical fields in 4H silicon carbide," Appl. Phys. Lett., vol. 71, no. 1, pp. 90-92, July 1997.
2. F. Yan, C. Qin, J. H. Zhao, and M. Weiner, "A novel technology for the formation of a very small bevel angel for edge termination," Electron. Lett., submitted for publication.
3. + diodes," IEEE Trans. Electron Devices, vol. 45, pp. 2102-2107, Oct. 1998.
4. D. M. Brown, E. T. Downey, M. Ghezzo, J. W. Kretchmer, R. J. Saia, Y. S. Liu, J. A. Edmond, G. Gati, J. M. Pimbley, and W. E. Schneider, "Silicon carbide UV photodiodes," IEEE Trans. Electron Devices, vol. 40, pp. 325-333, Feb. 1993.
5. + diodes," Appl. Phys. Lett., vol. 76, no. 26, pp. 3926-3928, Jun. 2000.
6. 0.2As diodes," IEEE Trans. Electron Devices, vol. 48, pp. 2198-2204, Oct. 2001.
7. S. G. Sridhara, R. P. Devaty, and W. J. Choyke, "Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å," J. Appl. Phys., vol. 84, no. 5, pp. 2963-2964, Sept. 1998.
8. 0.2As avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 14, pp. 522-524, Apr. 2002.
9. R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, pp. 164-168, 1964.