Low dark current 4H-SiC avalanche photodiodes

Electronics Letters

Volumn 39, Issue 23, 2003, Pages 1673-1674

  Guo, Xiangyi ^a   Beck, A ^a   Yang, Bo ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; OXIDATION; PASSIVATION; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

AVALANCHE PHOTODIODES; DARK CURRENT; MESA ETCHING; THERMAL OXIDATION;

PHOTODIODES;

EID: 0345412054     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20031059     Document Type: Article

References (5)

1. Konstantinov, A.O., et al.: 'Ionization rates and critical fields in 4H silicon carbide', Appl. Phys. Lett., 1997, 71, pp. 90-92.
2. Yan, F. et al., '4H-SiC visible blind UV avalanche photodiodes', Electron. Lett., 1999, 35, (11), pp. 929-930
3. Yan, F., et al., 'Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2″ positive bevel', Electron. Lett., 2002, 38, (7), pp. 335-336
4. Ng, B.K. et al.: 'Multiplication and excess noise characteristics of thin 4H-SiC UV avalance photodiodes', IEEE Photonics Technol. Lett., 2002, 14, (9), pp. 1342-1344
5. 2 on SiC by plasma enhanced chemical vapor deposition for power device applications', Thin Solid Films, 2003, 427, pp. 142-146