RF noise performance of low power InAs/AlSb HFETs

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 147-148

  Bergman, J ^a   Nagy, G ^a   Sullivan, G ^a   Brar, B ^a   Kadow, C ^b   Lin, H K ^b   Gossard, A ^b   Rodwell, M ^b  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electron mobility; Gallium arsenide; Gate leakage; HEMTs; Leakage current; Low frequency noise; MODFETs; Noise figure; Noise measurement; Radio frequency

Indexed keywords

ELECTRON MOBILITY; GALLIUM ARSENIDE; LEAKAGE CURRENTS; MODFETS; NOISE FIGURE;

DC CHARACTERISTICS; ENERGY-BAND DIAGRAM; GATE LEAKAGES; GATE LENGTH; LOW-FREQUENCY NOISE; MINIMUM NOISE FIGURE; NOISE MEASUREMENTS; RADIO FREQUENCIES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84942611935     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226909     Document Type: Conference Paper

References (3)

1. Boos, et al., inProc. IPRM 1997, pp. 193-196.
2. Fundamentals of RF and Microwave Noise Figure Measurements, Agilent App. Note 57-1
3. Shin, et al., IEEE Trans. Electron Devices, vol. 44, pp. 1883-1887, Nov. 1997.