An ultra-low power InAs/AlSb HEMT X-band low-Noise amplifier and RF switch

2006 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2006, Pages 239-242

  Hacker, Jonathan B ^a   Bergman, Joshua ^a   Nagy, Gabor ^a   Sullivan, Gerard ^a   Kadow, C ^b   Lin, H K ^b   Gossard, A C ^b   Rodwell, Mark ^b   Brar, B ^a  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b University of California   (United States)

Author keywords

Antimonide based compound semiconductor (abcs) hemt; Inas alsb hemt; Low noise amplifier

Indexed keywords

ANTIMONIDE BASED COMPOUND SEMICONDUCTORS; ASSOCIATED GAIN; GAAS SUBSTRATES; GATE LENGTH; HEMT TECHNOLOGIES; INAS/ALSB HEMT; MICROSTRIPES; ULTRA-LOW POWER;

HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE;

LOW NOISE AMPLIFIERS;

EID: 84887421580     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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