A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25-μm SiGe BiCMOS technology

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2005, Pages 39-42

  Shiramizu, Nobuhiro ^a   Masuda, Toru ^a   Tanabe, Masamichi ^b   Washio, Katsuyoshi ^a  

^a HITACHI LTD   (Japan)

^b Renesas Northern Japan Semiconductor Inc   (Japan)

Author keywords

Low noise amplifier; SiGe HBT; Ultra wideband

Indexed keywords

AMPLIFICATION; BANDWIDTH; ELECTRIC INDUCTORS; ENERGY UTILIZATION; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVES; SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

FREQUENCY RANGE; LOW NOISE AMPLIFIER (LNA); SIGE HBT; ULTRA WIDEBAND;

POWER AMPLIFIERS;

EID: 27644499447     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. S. Roy, et al., "Ultrawideband radio design: the promise of high-speed, short-range wireless connectivity," Proceedings of the IEEE, vol.92, pp.295-311, Feb. 2004.
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3. A. Ismail, et al., "A 3 to 10 GHz LNA Using a Wideband LC-ladder Matching Network," 2004 International Solid-State Circuits Conference Digest of Papers, pp.384-385, Feb. 2004.
4. H. Knapp, et al., "15 GHz Wideband Amplifier with 2.8 dB Noise Figure in SiGe Bipolar Technology," 2002 IEEE MTT-S Digest of Papers, pp.591-594, May. 2003.
5. R. Liu, et al., "A0.5-14-GHz 10.6-dB CMOS Cascode Distributed Amplifier," 2003 Symposium on VLSI Circuits Digest of Technical Papers, pp.139-140, Jun. 2003.
6. F. Ellinger, et al., "A Low Power DC-7.8 GHz BiCMOS LNA," 2004 IMS Digest of Papers, pp.13-16, Jun. 2004.
7. T. Masuda, et al., "Single-chip 5.8 GHz ETC transceiver IC with PLL and demodulation circuits using SiGe HBT/CMOS," 2002 International Solid-State Circuits Conference Digest of Papers, vol.1, pp.96-97, Feb. 2002.