An ultra-low DC power ultra-flat multi-octave MHEMT LNA MMIC

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2000, Pages 147-150

  Tang, O S A ^a   Hwang, K C ^a   Chao, P C ^a   Nichols, K ^a   MtPleasant, L ^a   Schmanski, B ^a   Lang, M ^a   Duh, K H G ^a   Smith, P M ^a   Valenti, S ^a   Melcher, R ^a   Taft, W ^a  

^a LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; GAIN MEASUREMENT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

LOW NOISE AMPLIFIERS; NOISE FIGURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034445481     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)