Low-temperature growth of germanium quantum dots on Silicon Oxide by inductively coupled plasma CVD

Chemical Vapor Deposition

Volumn 10, Issue 5, 2004, Pages 265-269

  Shieh, Jiann ^a   Ko, Tsung Shine ^b   Chen, Hsuen Li ^a   Dai, Bau Tong ^a   Chu, Tieh Chi ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Germanium; ICPCVD; Quantum dots; Silicon oxide

Indexed keywords

CATALYSTS; GOLD; INDUCTIVELY COUPLED PLASMA; LATTICE CONSTANTS; NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SILICON;

GERMANIUM QUANTUM DOTS; GOLD CATALYSTS; LATTICE MISMATCH; SILICON OXIDE;

SEMICONDUCTING GERMANIUM;

EID: 10444285394     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200306300     Document Type: Article

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