Growth and characterization of nanoscale 3C-SiC islands on Si substrates

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3565-3568

  Miyasato, Tatsuro ^a   Sun, Yong ^a   Wigmore, J Keith ^b  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

MORPHOLOGY; NANOSTRUCTURED MATERIALS; NUCLEATION; PLASMA ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SPUTTER DEPOSITION; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

HYDROGEN-PLASMA ETCHING; NANOSCALE ISLANDS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032613843     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369772     Document Type: Article

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