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Volumn 3, Issue 3-4, 2004, Pages 299-303

Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs

Author keywords

AlGaN GaN HEMT; Cellular Monte Carlo; Effective potential; Quantum correction

Indexed keywords


EID: 24944505717     PISSN: 15698025     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10825-004-7065-6     Document Type: Article
Times cited : (26)

References (9)
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  • 2
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  • 3
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  • 4
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  • 5
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  • 6
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  • 7
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    • "Spontaneous polarization and piezoelectric constants in III-V nitrides"
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  • 8
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  • 9
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    • "Impact of strong quantum confinement of the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion beam MOSFET"
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    • Knezevic, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.