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Volumn 71, Issue 16, 1997, Pages 2325-2327

Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition

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[No Author keywords available]

Indexed keywords


EID: 0347761382     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120062     Document Type: Article
Times cited : (69)

References (21)
  • 17
    • 0014464613 scopus 로고
    • R. L. Schwoebel, J. Appl. Phys. 40, 614 (1966); R. L. Schwoebel and E. J. Shipsey, J. Appl. Phys. 37, 3682 (1996).
    • (1966) J. Appl. Phys. , vol.40 , pp. 614
    • Schwoebel, R.L.1
  • 19
    • 85033297367 scopus 로고    scopus 로고
    • The In and As shutters are opened sequentially for 5 s and 25 s, respectively
    • The In and As shutters are opened sequentially for 5 s and 25 s, respectively.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.