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Journal of Crystal Growth

Volumn 158, Issue 1-2, 1996, Pages 15-27

Growth morphology evolution and dislocation introduction in the InGaAs/GaAs heteroepitaxial system

(3) Cullis, A G a Pidduck, A J a Emeny, M T a

a DRA (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRESSES; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT GENERATION; HETEROEPITAXIAL ALLOY LAYERS; ISLAND FORMATION; RIPPLE STRUCTURES; UNDULATING EPITAXIAL FILMS; UNDULATING GROWTH;

EPITAXIAL GROWTH;

EID: 0029755856 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00430-0 Document Type: Article

Times cited : (72)

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