Room temperature spin dependent current modulation in an InGaAs-based spin transistor with ferromagnetic contact

AIP Conference Proceedings

Volumn 772, Issue , 2005, Pages 1315-1316

  Yoh, Kanji ^a,b   Ferhat, Marhoun ^b   Riposan, Alexandru ^c   Millunchick, Joanna M ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33749495060     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1994595     Document Type: Conference Paper

References (8)

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2. H.Ohno, Kanji Yoh et al, Jpn.J.Appl.Phys. Express Lett. 42 (2003) pp.L1-L3.
3. Kanji Yoh et al, Semi.Sci.Technol. 19 (2004) S386-S389
4. Kanji Yoh et al, J.Vac.Sci.& Technol. B 22 (2004) 1432
5. J.M.Millunchick,J.Crystal Growth 236 (2002) 563.
6. Hiroshi Ohno, Kanji Yoh et al, J.Vac.Sci.& Technol. B 19 (2000) 228
7. Y.Sato et al, J.Appl. Phys. 89 (2001) 8017-8021.
8. T.Tsuchiya and K.Yoh, unpublished.