The effect of island density on pit nucleation in In0.27Ga0.73As/GaAs films

Surface Science

Volumn 525, Issue 1-3, 2003, Pages 222-228

  Riposan, A ^a   Martin, G K M ^a   Bouville, M ^a   Falk, M L ^a   Mirecki Millunchick, J ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Atomic force microscopy; Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Single crystal surfaces; Surface diffusion; Surface structure, morphology, roughness, and topography

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SINGLE CRYSTALS;

PIT NUCLEATION;

SURFACE CHEMISTRY;

EID: 0037429244     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02563-3     Document Type: Article

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