SCOPUS 정보 검색 플랫폼

Volumn 517, Issue 1-3, 2002, Pages 8-16

Wetting layer evolution in InAs/GaAs(0 0 1) heteroepitaxy: Effects of surface reconstruction and strain

(4) Krzyzewski, T J a Joyce, P B a Bell, G R a Jones, T S a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

Epitaxy; Gallium arsenide; Indium arsenide; Quantum effects; Scanning tunneling microscopy; Surface relaxation and reconstruction; Surface structure, morphology, roughness, and topography

Indexed keywords

DEPOSITION; EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SURFACE ROUGHNESS; WETTING;

SURFACE RECONSTRUCTION; SURFACE STAIN;

SURFACE PHENOMENA;

EID: 0036784073 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(02)02083-6 Document Type: Article

Times cited : (44)

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