Electrical, optical and surface morphology characteristics of InP grown using a valved phosphorus cracker cell in solid source molecular beam epitaxy

Materials Science and Engineering B

Volumn 55 B55, Issue 3, 1998, Pages 187-194

  Yoon, S F ^a   Zheng, H Q ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Epitaxial lnp; Photoluminescence; Valved phosphorous cracker cell; X ray diffraction

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALLINE MATERIALS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

FULL-WIDTH AT HALF-MAXIMUM (FWHM); VALVED PHOSPHORUS CRACKER CELL;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032483251     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(98)00208-6     Document Type: Article

References (21)

1. J.E. Epler, H. Schweizer, J. Pedersen, J. Sochtig, Appl. Phys. Lett. 66 (1995) 1472.
2. N.F. Gardner, Q.J. Hartmann, S.A. Stockman, G.E. Stillman, J.E. Baker, J.I. Malin, K.C. Hsieh, Appl. Phys. Lett. 65 (1994) 359.
3. L.S. Sidhu, S. Zukotynski, R.V. Kruzelecky, D.A. Thompson, J. Appl. Phys. 77 (1995) 3378.
4. B.X. Yang, H. Hasegawa, Jpn. J. Appl. Phys. 33 (1993) 742.
5. T.S. Rao, C. Lacelle, A.P. Roth, J. Vac. Sci. Technol. B 11 (1993) 840.
6. A.Y. Cho, J. Vac. Sci. Technol. 16 (1979) 276.
7. W.T. Tsang, R.C. Miller, F. Capasso, W.A. Bonner, Appl. Phys. Lett. 41 (1982) 467.
8. V.M. Airaksinen, T.S. Cheng, C.R. Stanley, J. Cryst. Growth 81 (1987) 332.
9. T. Martin, C.R. Stanley, A. lliadis, C.R. Whitehouse, D.E. Sykes, Appl. Phys. Lett. 46 (1985) 994.
10. T.S. Cheng, V.M. Airaksinen, C.R. Stanley, J. Appl. Phys. 64 (1988) 6662.
11. A. Sandhu, M. Missous, Jpn. J. Appl. Phys. 35 (1996) 2108.
12. B.X. Yang, H. Hasegawa, Jpn. J. Appl. Phys. 32 (1993) 704.
13. M. Missous, A.A. Aziz, A. Sandhu, Jpn. J. Appl. Phys. 36 (1997) 647.
14. J.C. Harmand, J.P. Praseuth, E. Idiart-Alhor, R. Palla, J.L. Pelouard, M. Quillec, J. Cryst. Growth 150 (1995) 1292.
15. M. Toivonen, A. Salokatve, K. Tappura, M. Jalonen, P. Savolainen, J. Nappi, M. Pessa, H. Asonen, Proc. 1996 Indium Phosphide and Related Materials Conf., IEEE, 1996, p.79.
16. S.F. Yoon, H.Q. Zheng, P.H. Zhang, K.W. Mah, J. Cryst. Growth, 186 (1998) 475.
17. P.A. Postigo, M.L. Dotor, P. Huertas, D. Golmayo, F. Briones, J. Appl. Phys. 77 (1995) 402.
18. J.N. Baillargeon, A.Y. Cho, R.J. Fischer, P.J. Pearah, K.Y. Cheng, J. Vac. Sci. Technol. B 12 (1994) 1106.
19. B.W. Liang, P.Z. Lee, D.W. Shih, C.W. Tu, Appl. Phys. Lett. 60 (1992) 2106.
20. P.W. Yu, B.W. Liang, C.W. Tu, Appl. Phys. Lett. 61 (1992) 2443.
21. T.P. Pearsall (Ed.), GaInAsP Alloy Semiconductors, Wiley, New York, 1982, p.156.