Scanning tunneling microscopy study of interfacial structure of InAs quantum dots on InP(001) grown by a double-cap method

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Akanuma, Y ^a   Yamakawa, I ^a   Sakuma, Y ^b   Usuki, T ^c   Nakamura, A ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY;

DOUBLE CAP METHOD; INTERFACIAL PROPERTIES; INTERFACIAL STRUCTURES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33847630705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2710470     Document Type: Article

References (23)

1. C. Santori, D. Fattal, J. Vuckovic, G. S. Solomon, and Y. Yamamoto, Nature (London) 419, 594 (2002).
2. Z. Yuan, B. E. Kardynal, R. M. Stevenson, A. J. Shields, C. J. Lobo, K. Cooper, N. S. Battie, D. A. Ritchie, and M. Pepper, Science 295, 102 (2002).
3. O. G. Schmidt, S. Kiravittaya, Y. Nakamura, H. Heidemeyer, R. Songmuang, C. Mueller, N. Y. Jin-Phillipp, K. Eberl, H. Wawra, S. Christiansen, H. Graebeldinger, and H. Schweizer, Surf. Sci. 514, 10 (2002).
4. S. Frechengues, N. Bertru, V. Drouot, B. Lambert, S. Robinet, S. Loualiche, D. Lacombe, and A. Ponchet, Appl. Phys. Lett. 74, 3356 (1999).
5. C. Paranthoen, N. Bertru, O. Dehaese, A. L. Corre, S. Loualiche, B. Lambert, and G. Patriarche, Appl. Phys. Lett. 78, 1751 (2001).
6. Y. Sakuma, K. Takemoto, S. Hirose, T. Usuki, and N. Yokoyama, Physica E (Amsterdam) 26, 81 (2005).
7. Y. Sakuma, M. Takeguchi, K. Takemoto, S. Hirose, T. Usuki, and N. Yokoyama, J. Vac. Sci. Technol. B 23, 1741 (2005).
8. K. Takemoto, Y. Sakuma, S. Hirose, T. Usuki, N. Yokoyama, T. Miyazawa, M. Takatsu, and Y. Arakawa, Jpn. J. Appl. Phys., Part 2 43, L993 (2004).
9. T. Miyazawa, K. Takemoto, Y. Sakuma, S. Hirose, T. Usuki, N. Yokoyama, M. Takatsu, and Y. Arakawa, Jpn. J. Appl. Phys., Part 2 44, L620 (2005).
10. B. Legrand, B. Grandidier, J. P. Nys, D. Stievenard, J. M. Gerard, and V. Thierry-Mieg, Appl. Phys. Lett. 73, 96 (1998).
11. H. Eisele, O. Flebbe, T. Kalka, C. Preinesberger, F. Heinrichsdorff, A. Krost, D. Bimberg, and M. Daehne-Prietsch, Appl. Phys. Lett. 75, 106 (1999).
12. D. M. Bruls, J. W. A. M. Vugs, P. M. Koenraad, H. W. M. Salemink, J. H. Wolter, M. Hopkinson, M. S. Skolnick, F. Long, and S. P. A. Gill, Appl. Phys. Lett. 81, 1708 (2002).
13. I. Yamakawa, R. Oga, Y. Fujiwra, Y. Takeda, and A. Nakamura, Appl. Phys. Lett. 84, 4436 (2004).
14. I. Yamakawa, Y. Akanuma, R. Akimoto, and A. Nakamura, Appl. Phys. Lett. 86, 153112 (2005).
15. S. Raymond, S. Studenikin, S. J. Cheng, M. Pioro-Ladriere, M. Ciorga, P. J. Poole, and M. D. Robertson, Semicond. Sci. Technol. 18, 385 (2003).
16. P. J. Poole, R. L. Williams, J. Lefebvre, and S. Moisa, J. Cryst. Growth 257, 89 (2003).
17. D. M. Bruls, P. M. Koenraad, M. Hopkinson, J. H. Wolter, and H. W. M. Salemink, Appl. Surf. Sci. 190, 258 (2002).
18. Q. Gong, P. Offermans, R. Noetzel, P. M. Koenraad, and J. H. Wolter, Appl. Phys. Lett. 85, 5697 (2004).
19. L. Ouattara, A. Mikkelsen, E. Lundgren, M. Borgstroem, L. Samuelson, and W. Seifert, Nanotechnology 15, 1701 (2004).
20. P. Offermans, P. M. Koenraad, R. Noetzel, J. H. Wolter, and K. Pierz, Appl. Phys. Lett. 87, 111903 (2005).
21. J. E. Epler, H. P. Schweizer, J. Pedersen, and J. Soechtig, Appl. Phys. Lett. 66, 1472 (1995).
22. M. Suhara, C. Nagao, H. Honji, Y. Miyamoto, K. Furuya, and R. Takemura, J. Cryst. Growth 179, 18 (1997).
23. R. Songmuang, S. Kiravittaya, and O. G. Schmidt, J. Cryst. Growth 249, 416 (2003).