Stacked InAs quantum dots in InP studied by cross-sectional scanning tunnelling microscopy

Nanotechnology

Volumn 15, Issue 12, 2004, Pages 1701-1707

  Ouattara, L ^a   Mikkelsen, A ^a   Lundgren, E ^a   Borgstrom M ^a   Samuelsoir, L ^a   Seifert, W ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

ANOMALIES; ATOMIC RESOLUTION; ATOMIC SCALE; ATOMIC STRUCTURE;

INDIUM COMPOUNDS;

EID: 11144269676     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/12/001     Document Type: Article

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