Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes

Journal of Crystal Growth

Volumn 179, Issue 1-2, 1997, Pages 18-25

  Suhara, Michihiko ^a   Nagao, Chuma ^a   Honji, Hidetaka ^a   Miyamoto, Yasuyuki ^a   Furuya, Kazuhito ^a   Takemura, Riichiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AFM; Energy level width; GaInAs InP; Growth mode; Monolayer step; OMVPE; Resonant tunneling diodes

Indexed keywords

ATOMIC FORCE MICROSCOPY; MONOLAYERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING INTERMETALLICS; TUNNEL DIODES;

ATOMIC ORDER FLATNESS; RESONANT TUNNEL DIODES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0031195427     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00103-6     Document Type: Article

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