Role of thin InP cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1741-1746

  Sakuma, Y ^a   Takeguchi, M ^a   Takemoto, K ^b   Hirose, S ^b   Usuki, T ^b   Yokoyama, N ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION EXCHANGE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; NEGATIVE IONS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SUPERCONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY;

ANION EXCHANGE; EMISSION WAVELENGTH; PHOSPHINE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 31144464368     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1949216     Document Type: Article

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