Atomic-scale observation of interfacial roughness and As-P exchange in InGaAs/InP multiple quantum wells

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4436-4438

  Yamakawa, I ^a   Oga, R ^a   Fujiwara, Y ^a   Takeda, Y ^a   Nakamura, A ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; COHERENT LIGHT; ELECTROCHEMISTRY; ETCHING; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE CHEMISTRY; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY (XSTM); INTERFACIAL ROUGHNESS; OPTICAL SPECTROSCOPY; VALENCE BANDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3042780184     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1758784     Document Type: Article

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