Growth of InN at high temperature by halide vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 6, 1997, Pages

  Takahashi, Naoyuki ^a   Matsumoto, Ryu ^a   Koukitu, Akinori ^a   Seki, Hisashi ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR PHASE EPITAXY;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031153391     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l743     Document Type: Article

References (9)