Vapor phase epitaxy of GaN using GaCl3/N2 and NH3/N2

Journal of Crystal Growth

Volumn 169, Issue 4, 1996, Pages 689-696

  Lee, Heon ^a   Harris Jr , James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DECOMPOSITION; ETCHING; FILM GROWTH; HYDROCHLORIC ACID; HYDROGEN; NITROGEN; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY; THERMODYNAMICS; VAPOR PHASE EPITAXY;

BAND EDGE EMISSIONS; CHLORIDE TRANSPORT VAPOR PHASE EPITAXY; GAS PHASE ETCHING REACTIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030566577     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00472-1     Document Type: Article

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