Vapor phase epitaxy of InN using InCl and InCl3 sources

Journal of Crystal Growth

Volumn 172, Issue 3-4, 1997, Pages 298-302

  Takahashi, Naoyuki ^a   Ogasawara, Jun ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INERT GASES; MASS TRANSFER; NITROGEN COMPOUNDS; SAPPHIRE; SEMICONDUCTOR GROWTH; TEMPERATURE; VAPOR PHASE EPITAXY;

INDIUM CHLORIDE; INDIUM NITRIDE; MONOMETHYLHYDRAZINE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031103765     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00751-8     Document Type: Article

References (10)

1. L.A. Marasina, I.G. Pichugin and M. Tlaczala, Kristall Tech. 12 (1977) 541.A.
2. Wakahara, T. Tsuchiya and A. Yoshida, Appl. Phys. Lett. 54 (1989) 709.
3. Y. Sato and S. Sato, J. Crystal Growth 144 (1994) 15.
4. Y. Sato and S. Sato, J. Crystal Growth 146 (1995) 262.
5. Y. Miura, N. Takahashi, A. Koukitu and H. Seki, Jpn. J. Appl. Phys. 34 (1995) L401.
6. Y. Miura, N. Takahashi, A. Koukitu and H. Seki, Jpn. J. Appl. Phys. 35 (1996) 546.
7. A. Koukitu, H. Ikeda, H. Yasutake and H. Seki, Jpn. J. Appl. Phys. 30 (1991) L1847.
8. S. Fujieda and Y. Matsumoto, Jpn. J. Appl. Phys. 30 (1991) L1665.
9. A. Kikuchi, H. Hoshi and K. Kishino, Jpn. J. Appl, Phys. 33 (1994) 688.
10. Y. Yamauchi, K. Uwai and N. Kobayashi, Jpn. J. Appl. Phys. 35 (1994) L80.