Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process

IEEE Electron Device Letters

Volumn 27, Issue 10, 2006, Pages 811-813

  Ren, C ^a,b   Chan, Daniel S H ^a   Loh, W Y ^b   Balakumar, S ^b   Du, A Y ^b   Tung, C H ^b   Lo, G Q ^b   Kumar, R ^b   Balasubramanian, N ^b   Kwong, D L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

CMOS; Dual work function (WF); Gate first; Intermixing (InM); Metal gate

Indexed keywords

CMOS; DUAL WORK FUNCTION (WF); GATE FIRST; INTERMIXING (INM); METAL GATE;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); TANNING; TANTALUM COMPOUNDS; WORK FUNCTION;

METALS;

EID: 33846999979     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.882569     Document Type: Article

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