Nitrogen diffusion in silicon: A multi-species process

ECS Transactions

Volumn 3, Issue 4, 2006, Pages 113-126

  Voronkov, V V ^a   Falster, R ^b  

^a MEMC Electronic Materials   (Italy)

^b MEMC Electronic Materials   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; DIMERS; DISSOCIATION; MONOMERS; NITROGEN COMPOUNDS; PRECIPITATION (CHEMICAL);

INTERSTITIAL DIMERIC SPECIES; MULTI SPECIES PROCESS; NITROGEN CONCENTRATION; NITROGEN DIFFUSION;

SILICON COMPOUNDS;

EID: 33846967419     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2355750     Document Type: Conference Paper

References (29)

1. T.Abe and H.Takeno, Materials Res. Soc. Symp. Proc., 263, 3 (1992).
2. W. v. Ammon, P.Dreier, W.Hensel, U.Lambert and L.Köster, Mater. Sci Eng. B, 36, 33 (1996).
3. M.Iida, W.Kusaki, M.Tamatsuka, E.Iino, M.Kimura and S.Muraoka, in Defects in Silicon III, PV 99-1, p.499, The Electrochemical Society, Pennington, NJ (1999).
4. K.Nakai, Y.Inoue, H.Yokota, A.Ikari, J.Takahashi, A.Tashikawa, K.Kitahara, Y.Ohta and W.Ohashi, J.Appl.Phys., 89, 4301 (2001).
5. K.Nakamura, T.Saishoji, S.Togawa and J.Tomioka, Proceedings of the Kazusa Academia Park Forum on the Science and Technology of Silicon Materials, p. 109, The Japan Technical Information Service (2001).
6. K.Sumino, I.Yonenaga, M.Imai and T.Abe, J.Appl.Phys., 54, 5016 (1983).
7. J.D.Murphy, A.Giannattasio, S.Senkader, R.J.Falster and P.R.Wilshaw, Phys.Stat.Sol. A, 202, 926 (2005).
8. J.D.Murphy, A.Giannattasio, C.R.Alpass, S.Senkader, R.J.Falster and P.R.Wilshaw, Solid State Phenomena, 108-109, 139 (2005).
9. H.J.Stein, Materials Res. Soc. Symp. Proc., 59, 523 (1986).
10. R.Jones, S.Oberg, F.Berg-Rasmussen and B.B.Nilsen, Phys.Rev.Lett., 72, 1882 (1994).
11. V.V. Voronkov and R.Falster, Solid State Phenomena, 95-96, 83 (2004).
12. T.Itoh and T.A.be, Appl.Phys.Lett., 53, 39 (1988).
13. V.V.Voronkov and R.Falster, J.Appl.Phys., (2006) accepted for publication.
14. H.Sawada and K.Kawakami, Phys.Rev. B, 62 (3), 1851 (2000).
15. H.Kageshima, A.Taguchi and K.Wada, Appl.Phys.Lett., 76, 3718 (2000).
16. J.P.Goss, I.Hahn, R.Jones, P.R.Briddon and S.Oberg, Phys.Rev. B, 67, 045206 (2003).
17. V.V. Voronkov, M.Porrini, P.Collareta, M.G.Pretto, R.Scala, R.Falster, G.I.Voronkova, A.V.Batunina, V.N.Golovina, L.V.Arapkina, A.S.Guliaeva and M.G.Milvidski, J.Appl.Phys., 89, 4289 (2001).
18. K.L.Brower, Phys. Rev. B, 26, 6040 (1982).
19. W. von Ammon, R.Hölzl, J.Virbulis, E.Dornberger, R.Schmolke and D.Gräf, J. Crystal Growth, 226, 19 (2001).
20. W.B.Knowlton, J.T.Walton, J.S.Lee, Y.K.Wong, E.E.Haller, W. v. Ammon and W.Zulener, Materials Science Forum, 196-201, 1761 (1995).
21. V.V.Voronkov and R.Falster, Materials Science and Engineering B, 114-115, 130 (2004).
22. A.Karoui, F.Santout Karoui, G.A.Rozgonyi and D.Yang, J.Appl.Phys., 96, 3255 (2004).
23. H.Sawada, K.Kawakami, A.Ikari and W.Ohashi, Phys. Rev. B, 65, 075201 (2002).
24. N.Fujita, R.Jones, J.P.Goss, T.Frauenheim, S.Oberg and P.R.Briddon, Solid State Phenomena, 108-109, 407 (2005).
25. A.G.Milnes, Deep Impurities in Semiconductors, Wiley, N. Y. (1973).
26. V.V.Voronkov, A.V.Batunina, G.I.Voronkova and R.Falster, Solid State Phenomena, 95-96, 117 (2004).
27. P.A.Schultz and J.S.Nelson, Appl.Phys.Letters, 78, 736 (2001).
28. W.Windl, Solid State Phenomena, 108-109, 125 (2005).
29. T.Abe, H.Harada, N.Ozawa and K.Adomi, Materials Res. Soc. Symp. Proc., 59, 537 (1986).