Nitrogen interaction with vacancies in silicon

Materials Science and Engineering: B

Volumn 114-115, Issue SPEC. ISS., 2004, Pages 130-134

  Voronkov, V V ^a   Falster, R ^b  

^a MEMC Electronic Materials   (Italy)

^b MEMC Electronic Materials   (Italy)

Author keywords

Nitrogen; Silicon; Vacancy; Void

Indexed keywords

AGGLOMERATION; ANNEALING; CRYSTAL GROWTH FROM MELT; DIMERS; NITROGEN; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS;

FORMATION ENERGY; VACANCY; VACANCY AGGREGATION; VOIDS;

SILICON;

EID: 10644242613     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.07.023     Document Type: Conference Paper

References (20)

1. T. Abe, H. Takeno, MRS Symp. Proc. 263 (1992) 3.
2. W. von Ammon, P. Drier, W. Hensel, U. Lambert, L. Kostler, Mater. Sci. Eng. B 36 (1996) 33.
3. K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi, K. Kitahara, Y. Ohta, W. Ohashi, J. Appl. Phys. 80 (2001) 4301.
4. K. Nakamura, T. Saishoji, S. Togawa, J. Tomioka, Proceedings of the Kazusa Academia Park Forum on the Science and Technology of Silicon Materials, The Japan Technical Information Service, November 26-28, 2001, p. 109.
5. H.J. Stein, MRS Symp. Proc. 59 (1986) 523.
6. R. Jones, S. Oberg, F. Berg-Rasmussen, B.B. Nilsen, Phys. Rev. Lett. 72 (1994) 1882.
7. V.V. Voronkov, R. Falster, Solid State Phenomena 95/96 (2004) 83.
8. N.I. Puzanov, A.M. Eidenzon, Semicond. Sci. Technol. 7 (1992) 406.
9. J.P. Goss, I. Hahn, R. Jones, P.R. Briddon, S. Oberg, Phys. Rev. B67 (2003) 045206.
10. H. Sawada, K. Kawakami, Phys. Rev. B 62 (2000) 1851.
11. V.V. Voronkov, R. Falster, J. Appl. Phys. 86 (1999) 5975.
12. V.V. Voronkov, R. Falster, J. Crystal Growth (2004) in press.
13. V.V. Voronkov, R. Falster, J. Electrochem. Soc. 149 (2002) 167.
14. V.V. Voronkov, Proceedings of Third International Symposium on Advanced Science and Technology of Silicon Materials, The Japan Society for the Promotion of Science, 2000, p. 289.
15. K.L. Brower, Phys. Rev. B 26 (1982) 6040.
16. K. Murakami, H. Kuribayashi, K. Masuda, Jpn. J. Appl. Phys. Part 2 27 (1988) 1414.
17. T. Abe, H. Harada, N. Ozawa, K. Adomi, MRS Symp. Proc. 59 (1986) 537.
18. J.S. Blackmore, Semiconductor Statistics, Pergamon, New York, 1962.
19. F. Quast, P. Pichler, H. Ryssel, R. Falster, in: C.L. Claeys, P. Rai-Choudhury, M.M. Watanabe, P. Stalhofer, H.J. Dawson (Eds.), High-Purity Silicon VI, 2000, p. 156, PV 2000-17, ECS Pennington, NJ.
20. O.V. Feklisova, E.B. Yakimov, Solid State Phenomena 95/96 (2004) 495.