Nitrogen Diffusion and Interaction with Oxygen in Si

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 83-92

  Voronkov, V V ^a   Falster, R ^a  

^a MEMC   (Italy)

Author keywords

Diffusion; Dissociation; Nitrogen; Oxygen; Silicon

Indexed keywords

ANNEALING; BINDING ENERGY; CATALYTIC CRACKING; COMPUTER SIMULATION; CONCENTRATION (PROCESS); DIFFUSION IN SOLIDS; DIMERS; DISSOCIATION; ELECTRON SCATTERING; FILM GROWTH; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MONOMERS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; STRENGTH OF MATERIALS;

INTERSTITIAL DEFECTS; MELTING POINTS; THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 1642557050     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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