Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 926-930

  Murphy, J D ^a   Giannattasio, A ^a   Senkader, S ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DIMERIC NITROGEN; DISLOCATION LOCKING; NITROGEN-DOPED CZOCHRALSKI SILICON (NCZ-SI); NITROGEN-DOPED FLOAT-ZONE SILICON (NFZ-SI);

ANNEALING; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); NITROGEN; OXYGEN;

SILICON;

EID: 25444500439     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460532     Document Type: Conference Paper

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