Energetics and kinetics of defects and impurities in silicon from atomistic calculations

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 125-132

  Windl, Wolfgang ^a  

^a The Ohio State University   (United States)

Author keywords

Ab initio; Diffusion reaction coefficients; Interface segregation; Nitrogen diffusion

Indexed keywords

CALCULATIONS; DIFFUSION; EQUILIBRIUM CONSTANTS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

AB INITIO; AB INITIO CALCULATIONS; DIFFUSION REACTION; EQUILIBRIUM DISTRIBUTIONS; INTERFACE SEGREGATION; NITROGEN DIFFUSION; NUDGED ELASTIC BAND METHODS; TRANSITION STATE THEORIES;

DEFECTS;

EID: 33750506577     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.125     Document Type: Conference Paper

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