The influence of nitrogen on dislocation locking in float-zone silicon

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 139-144

  Murphy, J D ^a   Giannattasio, A ^a   Alpass, C R ^a   Senkader, S ^a   Falster, R J ^b   Wilshaw, P R ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b MEMC Electronic Materials SpA   (Italy)

Author keywords

Diffusion; Dislocation; Float zone; Locking; Nitrogen; Silicon; Transport

Indexed keywords

ACTIVATION ENERGY; ANNEALING; BINDING ENERGY; DEFECTS; DIFFUSION; DISLOCATIONS (CRYSTALS); NITROGEN; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TEMPERATURE DISTRIBUTION;

DISLOCATION LOCKING; FLOAT ZONE SILICON; FLOAT ZONES; LOCKING; NITROGEN CONCENTRATIONS; NITROGEN IMPURITY; TEMPERATURE DEPENDENCE; TRANSPORT;

LOCKS (FASTENERS);

EID: 33750502964     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.139     Document Type: Conference Paper

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