Electrical property improvements of high- k gate oxide by in situ nitrogen incorporation during atomic layer deposition

Applied Physics Letters

Volumn 90, Issue 6, 2007, Pages

  Maeng, W J ^a   Lim, S J ^a   Kwon, Soon Ju ^a   Kim, H ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ELECTRIC PROPERTIES; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITROGEN; OXIDES;

ATOMIC LAYER DEPOSITION (ALD); DIELECTRIC BREAKDOWN MEASUREMENT; DIELECTRIC STRENGTH; GATE DIELECTRICS; OXIDE FILMS;

DIELECTRIC MATERIALS;

EID: 33846945737     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2472189     Document Type: Article

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