Improvement of electrical and reliability properties of tantalum pentoxide by high-density plasma (HDP) annealing in N2O

IEEE Electron Device Letters

Volumn 23, Issue 11, 2002, Pages 643-645

  Chang, S J ^a   Lee, J S ^a   Chen, J F ^a   Sun, S C ^b   Liu, C H ^c   Liaw, U H ^d   Huang, B R ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NAN JEON INSTITUTE OF TECHNOLOGY   (Taiwan)

^d CHIN MIN INSTITUTE OF TECHNOLOGY   (Taiwan)

^e NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

High density plasma (HDP); N2O; Plasma annealing; Ta2O5; Time dependent dielectric breakdown (TDDB)

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TANTALUM COMPOUNDS;

HIGH-DENSITY PLASMA (HDP);

LEAKAGE CURRENTS;

EID: 0036864477     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.805029     Document Type: Article

References (12)

1. S.H. Lo, D.A. Buchanan, Y. Taur, and W. Wang, "Quantum mechanical modeling of electron tunneling current from inversion layer of ultrathin oxide nMOSFETs," IEEE Electron Device Lett., vol. 18, pp. 209-211, May 1997.
2. M. Koyanagi, H. Sunami, N. Hashimoto, and M. Ashikawa, "Novel high-density, stacked capacitor MOS RAM," in IEDM Tech. Dig., 1978, pp. 348-351.
3. S. Ando, M. Taguchi, and T. Nakamura, "Comparison of DRAM cells in the simulation of soft error rates," in Symp. VLSI Technol. Dig., 1985, pp. 90-91.
4. S. Kamiyama, H. Suzuki, H. Watanahe, A. Sakai, H. Kimura, and J. Mizuki, "Ultrathin tantalum oxide capacitor process using oxygen plasma annealing," J. Electrochem. Soc., vol. 141, pp. 1246-1251, 1994.
5. 5 films for storage dielectrics of 64-Mb DRAMs," IEEE Trans. Electron Devices, vol. 38, pp. 455-462, Mar. 1991.
6. 5 capacitor process technology for 256 Mbit DRAMs," in IEDM Tech. Dig., 1991, pp. 827-830.
7. 5 films by LPCVD for ULSI application," J. Electrochem. Soc., vol. 137, pp. 1297-1304, 1990.
8. 2O annealing," IEEE Trans. Electron Devices, vol. 44, pp. 1027-1029, May 1997.
9. 5 films grown by chemical vapor deposition," J. Electrochem. Soc., vol. 143, pp. 977-983, 1996.
10. D.W. Hess, "Plasma-assisted oxidation, anodization and nitridation of silicon," IBM J. Res. Develop., vol. 43, pp. 127-145, 1999.
11. A. Masuda, A. Morimoto, M. Kumeda, T. Shimizu, Y. Yonezawa, and T. Minamikawa, "Novel oxidation process of hydrogenated amorphous silicon utilizing nitrous oxide plasma," Appl. Phys. Lett., vol. 61, pp. 816-818, 1992.
12. G.R. Hamson, Wavelength Table. Cambridge, MA: MIT Press, 1985, pp. 227-235.