Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field

Nano Letters

Volumn 7, Issue 1, 2007, Pages 188-193

  Moskalenko, Evgenii S ^a,b   Larsson, Mats ^a   Karlsson, K Fredrik ^a   Holtz, Per Olof ^a   Monemar, Bo ^a   Schoenfeld, Winston V ^c   Petroff, Pierre M ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b IOFFE INSTITUTE   (Russian Federation)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INFRARED ILLUMINATION; LATERAL TRANSPORT; MICROPHOTOLUMINESCENCE MEASUREMENTS; PHOTOEXCITED CARRIERS;

ELECTRIC FIELD EFFECTS; EXCITONS; IMAGE ENHANCEMENT; INFRARED RADIATION; LUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSPORT PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; ELECTROMAGNETIC FIELD; LUMINESCENCE; QUANTUM THEORY;

ARSENICALS; ELECTROMAGNETIC FIELDS; GALLIUM; INDIUM; LUMINESCENCE; QUANTUM THEORY;

EID: 33846879597     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062417u     Document Type: Article

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33. 25 produced by ionized impurities in the close vicinity of QDs.
34. QD is related to IQD by performing summation over all individual QDs that are located within the area of the laser spot.
35. The electric field was computed by solving Maxwell's equations by commercial software relying on methods of finite elements.