Control of quantum dot excitons by lateral electric fields

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Stavarache, V ^a   Reuter, D ^a   Wieck, A D ^a   Schwab, M ^b   Yakovlev, D R ^b   Oulton, R ^b   Bayer, M ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b TU DORTMUND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EXCITONS; GATES (TRANSISTOR); ION IMPLANTATION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPIC ANALYSIS;

ENERGY SHIFTS; N-I-N LATERAL GATE STRUCTURES; PHOTOLUMINESCENCE (PL) SPECTROSCOPY; SINGLE DOT SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33748980814     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345233     Document Type: Article

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