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Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 15, 2003, Pages

Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot

(8) Moskalenko, S a,b Donchev, V a,c Karlsson, F a Holtz, O a Monemar, B a Schoenfeld, V d Garcia, M d Petroff, M d

a LINKÖPING UNIVERSITY (Sweden)

b IOFFE INSTITUTE (Russian Federation)

c UNIVERSITY OF SOFIA (Bulgaria)

d University of California at Santa Barbara (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ELECTRON; ELECTRON CAPTURE DETECTION; INFRARED RADIATION; INFRARED SPECTROSCOPY; PHASE TRANSITION; PHOTOLUMINESCENCE; QUANTUM MECHANICS; SEMICONDUCTOR; WETTABILITY;

EID: 3042712986 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.68.155317 Document Type: Article

Times cited : (38)

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