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Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 23, 2002, Pages 2353141-2353146

Changes in luminescence intensities and carrier dynamics induced by proton irradiation in InxGa1-xAs/GaAs quantum dots

(7) Marcinkevicius S a Siegert, J a Leon, R b Cechavicius B c Magness, B d Taylor, W d Lobo, C e

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

c CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY (Lithuania)

d CALIFORNIA STATE UNIVERSITY (United States)

e UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC DERIVATIVE; GALLIUM;

ARTICLE; LUMINESCENCE; MEASUREMENT; MOLECULAR DYNAMICS; PHOTOACTIVATION; PROTON RADIATION; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 0037116104 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (30)

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