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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1501-1507

Magneto-photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots

(6) Menard S a Beerens, J a Morris, D a Aimez, V a Beauvais, J a Fafard, S b

a UNIVERSITÉ DE SHERBROOKE (Canada)

b NATIONAL RESEARCH COUNCIL CANADA (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TRAPS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; INTERDIFFUSION (SOLIDS); MAGNETIC FIELD EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POINT DEFECTS; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

CARRIER CAPTURE DYNAMICS; FOCK-DARWIN ENERGY LEVEL; INTERMIXING EFFECT; MAGNETO-PHOTOLUMINESCENCE; SELF-ASSEMBLED QUANTUM DOT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035982576 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1495504 Document Type: Conference Paper

Times cited : (14)

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