Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Kowalik, K ^a,b   Krebs, O ^a   Lemaitre A ^a   Laurent, S ^a   Senellart, P ^a   Voisin, P ^a   Gaj, J A ^b  

^a CNRS   (France)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC FIELD EFFECTS; ELECTROOPTICAL EFFECTS; EXCITONS; PERTURBATION TECHNIQUES; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ANISOTROPIC EXCHANGE SPLITTING (AES); LINEAR POLARIZATION; STARK SHIFT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13644280627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1855409     Document Type: Article

References (16)

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