Effect of capping silicon nitride layer and nitrided gate oxide on hump of transistors

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 532-534

  Park, Won K ^a   Lee, Jung H ^a   Lim, Geun ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MOISTURE; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICON NITRIDE; SILICON WAFERS; THERMAL DIFFUSION;

HIGH VOLTAGE TRANSISTORS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; LOW VOLTAGE TRANSISTORS; MOISTURE DIFFUSION; NITRIDED GATE OXIDE;

MOSFET DEVICES;

EID: 3943104812     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.832121     Document Type: Article

References (7)

1. L. Baldi and A. Maurelli, "Embedded nonvolatile memories in deep-submicron CMOC," in Proc. ESSDERC, 1999, pp. 127-134.
2. D. Shum, "Embedded non volatile memories," in Proc. ASIC IEEE 4th Int. Conf., 2001, pp. 210-215.
3. L. Baldi, L. Sourgen, and P. Gravez, "An advanced smart card family for public key algorithm," in Proc. ICECS IEEE Int. Conf., 1996, pp. 558-561.
4. P. Sallagoity, M. Ada-Hanifi, M. Paoli, and M. Haond, "Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies," IEEE Trans. Electron Devices, vol. 43, pp. 1900-1906, Nov. 1996.
5. S. P. Murarka, "Diffusion and segregation of ion-implanted boron in silicon in dry oxygen ambients," Phys. Rev. B, vol. 12, no. 6, pp. 2502-2519, 1975.
6. S. K. Park, M. S. Suh, J. Y. Kim, G. H. Yoon, and S. H. Jang, "CMOSFET characteristics induced by moisture diffusion from inter-layer dielectric in 0.23 μm DRAM technology with shallow trench isolation," in Proc. 38th Annu. Int. Reliability Physics Symp., 2000, pp. 164-168.
7. K. Taniguchi, K. Kurosawa, and M. Kashiwagi, "Oxidation enhanced diffusion of boron and phosphorus in (100) silicon," J. Electrochem. Soc., vol. 127, no. 10, pp. 2243-2248, 1980.