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Volumn 42, Issue 10, 1998, Pages 1871-1879

Analytical subthreshold current hump model for deep-submicron shallow-trench-isolated cmos devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTOR DEVICE MODELS;

EID: 0032182598     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00161-0     Document Type: Article
Times cited : (7)

References (12)
  • 1
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    • Subthreshold current in oxide isolated structures
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    • (1983) IEEE Electron Device Lett. , vol.4 , Issue.4 , pp. 114-115
    • Sugino, M.1    Akers, L.A.2
  • 2
    • 0030383520 scopus 로고    scopus 로고
    • A shallow trench isolation using LOCOS edge for preventing corner effects for 0.25/ 0.18 μm CMOS technologies and beyond
    • Chatterjee, A., Rogers, D., McKee, J., Ali, I., Nag, S. and Chen, I.-C., A shallow trench isolation using LOCOS edge for preventing corner effects for 0.25/ 0.18 μm CMOS technologies and beyond. IEDM Tech. Dig., 1996, 829-832.
    • (1996) IEDM Tech. Dig. , pp. 829-832
    • Chatterjee, A.1    Rogers, D.2    McKee, J.3    Ali, I.4    Nag, S.5    Chen, I.-C.6
  • 4
    • 0030398050 scopus 로고    scopus 로고
    • A novel 0.25 μm shallow trench isolation technology
    • Chen, C., Chou, J. W., Lur, W. and Sun, S. W., A novel 0.25 μm shallow trench isolation technology. IEDM Tech. Dig., 1996, 837-840.
    • (1996) IEDM Tech. Dig. , pp. 837-840
    • Chen, C.1    Chou, J.W.2    Lur, W.3    Sun, S.W.4
  • 5
    • 0024050662 scopus 로고
    • Three-dimensional analysis of subthreshold swing and transconductance for fully recessed oxide (trench) isolated 1/4-μm-width MOSFET's
    • Shigyo, N., Fukuda, S., Wada, T., Hieda, K., Hamamoto, T., Watanabe, H., Sunouchi, K. and Tango, H., Three-dimensional analysis of subthreshold swing and transconductance for fully recessed oxide (trench) isolated 1/4-μm-width MOSFET's, IEEE Trans. Electron Devices, 1988, 35(7), 945-951.
    • (1988) IEEE Trans. Electron Devices , vol.35 , Issue.7 , pp. 945-951
    • Shigyo, N.1    Fukuda, S.2    Wada, T.3    Hieda, K.4    Hamamoto, T.5    Watanabe, H.6    Sunouchi, K.7    Tango, H.8
  • 7
    • 0041433136 scopus 로고
    • Analysis of an anomalous subthreshold current in a fully recessed oxide MOSFET using a three-dimensional device simulator
    • Shigyo, N. and Dang, R., Analysis of an anomalous subthreshold current in a fully recessed oxide MOSFET using a three-dimensional device simulator, IEEE Trans. Electron Devices, 1985, 32(2), 441-445.
    • (1985) IEEE Trans. Electron Devices , vol.32 , Issue.2 , pp. 441-445
    • Shigyo, N.1    Dang, R.2
  • 8
    • 0030287695 scopus 로고    scopus 로고
    • Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies
    • Sallagoity, P., Hanifi, M. A., Paoli, M. and Haond, M., Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies, IEEE Trans. Electron Devices, 1996, 43(11), 1900-1906.
    • (1996) IEEE Trans. Electron Devices , vol.43 , Issue.11 , pp. 1900-1906
    • Sallagoity, P.1    Hanifi, M.A.2    Paoli, M.3    Haond, M.4
  • 9
    • 0033884611 scopus 로고    scopus 로고
    • A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation
    • to be published
    • Lin, S. C., Kuo, J. B. and Sun, S. W., A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation. IEEE Trans. Electron Devices (to be published).
    • IEEE Trans. Electron Devices
    • Lin, S.C.1    Kuo, J.B.2    Sun, S.W.3
  • 10
    • 0042435499 scopus 로고
    • An analytical model for the inverse narrow-gate effect of a metal-oxide-semiconductor field-effect transistor
    • Hong, K. M. and Cheng, Y. C., An analytical model for the inverse narrow-gate effect of a metal-oxide- semiconductor field-effect transistor, J. Appl. Phys., 1987, 61(6), 2387-2392.
    • (1987) J. Appl. Phys. , vol.61 , Issue.6 , pp. 2387-2392
    • Hong, K.M.1    Cheng, Y.C.2
  • 11
    • 0031352397 scopus 로고    scopus 로고
    • Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects
    • October
    • Su, K. W. and Kuo, J. B., Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects, IEEE SOI Conf., 1997, October, 84-85.
    • (1997) IEEE SOI Conf. , pp. 84-85
    • Su, K.W.1    Kuo, J.B.2
  • 12
    • 0020142882 scopus 로고
    • CAD model for threshold and subthreshold conduction in MOSFET's
    • Antognetti, P., Caviglia, D. D. and Profumo, E., CAD model for threshold and subthreshold conduction in MOSFET's, IEEE J. Solid-State Circuits, 1982, 17(3), 454-458.
    • (1982) IEEE J. Solid-state Circuits , vol.17 , Issue.3 , pp. 454-458
    • Antognetti, P.1    Caviglia, D.D.2    Profumo, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.