-
1
-
-
0020733149
-
Subthreshold current in oxide isolated structures
-
Sugino, M. and Akers, L. A., Subthreshold current in oxide isolated structures, IEEE Electron Device Lett., 1983, 4(4), 114-115.
-
(1983)
IEEE Electron Device Lett.
, vol.4
, Issue.4
, pp. 114-115
-
-
Sugino, M.1
Akers, L.A.2
-
2
-
-
0030383520
-
A shallow trench isolation using LOCOS edge for preventing corner effects for 0.25/ 0.18 μm CMOS technologies and beyond
-
Chatterjee, A., Rogers, D., McKee, J., Ali, I., Nag, S. and Chen, I.-C., A shallow trench isolation using LOCOS edge for preventing corner effects for 0.25/ 0.18 μm CMOS technologies and beyond. IEDM Tech. Dig., 1996, 829-832.
-
(1996)
IEDM Tech. Dig.
, pp. 829-832
-
-
Chatterjee, A.1
Rogers, D.2
McKee, J.3
Ali, I.4
Nag, S.5
Chen, I.-C.6
-
3
-
-
0024682379
-
+-polysilicon gate
-
+-polysilicon gate, IEEE Trans. Electron Devices, 1989, 36(6), 1110-1115.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, Issue.6
, pp. 1110-1115
-
-
Ohe, K.1
Odanaka, S.2
Moriyama, K.3
Hori, T.4
Fuse, G.5
-
4
-
-
0030398050
-
A novel 0.25 μm shallow trench isolation technology
-
Chen, C., Chou, J. W., Lur, W. and Sun, S. W., A novel 0.25 μm shallow trench isolation technology. IEDM Tech. Dig., 1996, 837-840.
-
(1996)
IEDM Tech. Dig.
, pp. 837-840
-
-
Chen, C.1
Chou, J.W.2
Lur, W.3
Sun, S.W.4
-
5
-
-
0024050662
-
Three-dimensional analysis of subthreshold swing and transconductance for fully recessed oxide (trench) isolated 1/4-μm-width MOSFET's
-
Shigyo, N., Fukuda, S., Wada, T., Hieda, K., Hamamoto, T., Watanabe, H., Sunouchi, K. and Tango, H., Three-dimensional analysis of subthreshold swing and transconductance for fully recessed oxide (trench) isolated 1/4-μm-width MOSFET's, IEEE Trans. Electron Devices, 1988, 35(7), 945-951.
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, Issue.7
, pp. 945-951
-
-
Shigyo, N.1
Fukuda, S.2
Wada, T.3
Hieda, K.4
Hamamoto, T.5
Watanabe, H.6
Sunouchi, K.7
Tango, H.8
-
6
-
-
0027641860
-
The current-carrying corner inherent to trench isolation
-
Bryant, A., Haensch, W., Geissler, S., Mandelman, J., Poindexter, D. and Steger, M., The current-carrying corner inherent to trench isolation, IEEE Electron Device Lett., 1993, 14(8), 412-414.
-
(1993)
IEEE Electron Device Lett.
, vol.14
, Issue.8
, pp. 412-414
-
-
Bryant, A.1
Haensch, W.2
Geissler, S.3
Mandelman, J.4
Poindexter, D.5
Steger, M.6
-
7
-
-
0041433136
-
Analysis of an anomalous subthreshold current in a fully recessed oxide MOSFET using a three-dimensional device simulator
-
Shigyo, N. and Dang, R., Analysis of an anomalous subthreshold current in a fully recessed oxide MOSFET using a three-dimensional device simulator, IEEE Trans. Electron Devices, 1985, 32(2), 441-445.
-
(1985)
IEEE Trans. Electron Devices
, vol.32
, Issue.2
, pp. 441-445
-
-
Shigyo, N.1
Dang, R.2
-
8
-
-
0030287695
-
Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies
-
Sallagoity, P., Hanifi, M. A., Paoli, M. and Haond, M., Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies, IEEE Trans. Electron Devices, 1996, 43(11), 1900-1906.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, Issue.11
, pp. 1900-1906
-
-
Sallagoity, P.1
Hanifi, M.A.2
Paoli, M.3
Haond, M.4
-
9
-
-
0033884611
-
A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation
-
to be published
-
Lin, S. C., Kuo, J. B. and Sun, S. W., A closed-form back-gate-bias related inverse narrow-channel effect model for deep-submicron VLSI CMOS devices using shallow trench isolation. IEEE Trans. Electron Devices (to be published).
-
IEEE Trans. Electron Devices
-
-
Lin, S.C.1
Kuo, J.B.2
Sun, S.W.3
-
10
-
-
0042435499
-
An analytical model for the inverse narrow-gate effect of a metal-oxide-semiconductor field-effect transistor
-
Hong, K. M. and Cheng, Y. C., An analytical model for the inverse narrow-gate effect of a metal-oxide- semiconductor field-effect transistor, J. Appl. Phys., 1987, 61(6), 2387-2392.
-
(1987)
J. Appl. Phys.
, vol.61
, Issue.6
, pp. 2387-2392
-
-
Hong, K.M.1
Cheng, Y.C.2
-
11
-
-
0031352397
-
Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects
-
October
-
Su, K. W. and Kuo, J. B., Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects, IEEE SOI Conf., 1997, October, 84-85.
-
(1997)
IEEE SOI Conf.
, pp. 84-85
-
-
Su, K.W.1
Kuo, J.B.2
-
12
-
-
0020142882
-
CAD model for threshold and subthreshold conduction in MOSFET's
-
Antognetti, P., Caviglia, D. D. and Profumo, E., CAD model for threshold and subthreshold conduction in MOSFET's, IEEE J. Solid-State Circuits, 1982, 17(3), 454-458.
-
(1982)
IEEE J. Solid-state Circuits
, vol.17
, Issue.3
, pp. 454-458
-
-
Antognetti, P.1
Caviglia, D.D.2
Profumo, E.3
|