A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(1 0 0)

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 1106-1110

  Jiang, W R ^a   Qin, Jie ^a   Hu, D Z ^a   Xiong, H ^a   Jiang, Z M ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

A1. Low dimensional structures; A1. X ray diffraction; A3. Molecular beam epitaxy

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

TWO STAGE GROWTH METHOD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035399385     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00997-6     Document Type: Conference Paper

References (14)