Influence of Si interdiffusion on carbon-induced growth of Ge quantum dots: A strategy for tuning island density

Nanotechnology

Volumn 17, Issue 10, 2006, Pages 2602-2608

  Bernardi, A ^a   Osso J O ^a   Alonso, M I ^a   Goi A R ^a   Garriga, M ^a  

^a CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; EPITAXIAL GROWTH; GERMANIUM; MONOLAYERS; MORPHOLOGY; OPTOELECTRONIC DEVICES; RAMAN SCATTERING;

DEPOSITION TEMPERATURE; GE QUANTUM DOTS; GE WETTING LAYER; SI INTERDIFFUSION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646740182     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/10/026     Document Type: Article

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