Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001)

Nanotechnology

Volumn 17, Issue 18, 2006, Pages 4743-4747

  Yakimov, A I ^a   Nikiforov, A I ^a   Dvurechenskii, A V ^a   Ulyanov, V V ^a   Volodin, V A ^a   Groetzschel, R ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY;

DEPOSITION RATE; GE ISLANDS; SIZE DISTRIBUTION; STRUCTURAL QUALITY;

GERMANIUM;

EID: 33748357096     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/18/036     Document Type: Article

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