Characterization of the ion cathode fall region in relation to the growth rate in plasma sputter deposition

European Physical Journal D

Volumn 41, Issue 2, 2007, Pages 303-309

  Palmero, A ^a   Van Hattum, E D ^a   Rudolph, H ^a   Habraken, F H P M ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

52.77. j Plasma applications; 52.77.Dq Plasma based ion implantation and deposition; 81.15.Cd Deposition by sputtering

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; CATHODES; ELECTRIC FIELDS; ION IMPLANTATION; MAGNETRON SPUTTERING; PLASMA APPLICATIONS; PLASMA DENSITY;

-J PLASMA APPLICATION; 52.77.; 81.15.; CATHODE FALL; CD DEPOSITION BY SPUTTERING; DEPOSITION BY SPUTTERING; DQ PLASMA-BASED ION IMPLANTATION AND DEPOSITION; ION CURRENTS; PLASMA-BASED ION IMPLANTATION AND DEPOSITION;

DEPOSITION RATES;

EID: 33846622717     PISSN: 14346060     EISSN: 14346079     Source Type: Journal    
DOI: 10.1140/epjd/e2006-00218-8     Document Type: Article

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